Nimewo Pati :
SIZ342DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET DL N-CH 30V POWERPAIR3X3
FET Kalite :
2 N-Channel (Dual)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15.7A (Ta), 100A (Tc)
RD sou (Max) @ Id, Vgs :
11.5 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
650pF @ 15V
Pouvwa - Max :
3.6W, 4.3W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-Power33 (3x3)