Nimewo Pati :
TSM025NB04LCR RLG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET SINGLE N-CHANNEL TRENCH
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
24A (Ta), 161A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.5 mOhm @ 24A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
112nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
6435pF @ 20V
Disipasyon Pouvwa (Max) :
3.1W (Ta), 136W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PDFN (5x6)