Vishay Siliconix - SIRA80DP-T1-RE3

KEY Part #: K6396171

SIRA80DP-T1-RE3 Pricing (USD) [115015PC Stock]

  • 1 pcs$0.32159

Nimewo Pati:
SIRA80DP-T1-RE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CHAN 30V POWERPAK SO-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Siliconix SIRA80DP-T1-RE3 electronic components. SIRA80DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIRA80DP-T1-RE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIRA80DP-T1-RE3 Atribi pwodwi yo

Nimewo Pati : SIRA80DP-T1-RE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CHAN 30V POWERPAK SO-8
Seri : TrenchFET® Gen IV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 0.62 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 188nC @ 10V
Vgs (Max) : +20V, -16V
Antre kapasite (Ciss) (Max) @ Vds : 9530pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 104W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8