Nimewo Pati :
SIHH21N60E-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 600V 20A POWERPAK8X8
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
176 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
83nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2015pF @ 100V
Disipasyon Pouvwa (Max) :
104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 8 x 8