IXYS - IXTN40P50P

KEY Part #: K6398060

IXTN40P50P Pricing (USD) [3596PC Stock]

  • 1 pcs$12.64809
  • 10 pcs$11.69971
  • 25 pcs$10.75097
  • 100 pcs$9.99199
  • 250 pcs$9.16987
  • 500 pcs$8.72718

Nimewo Pati:
IXTN40P50P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET P-CH 500V 40A SOT227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in IXYS IXTN40P50P electronic components. IXTN40P50P can be shipped within 24 hours after order. If you have any demands for IXTN40P50P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTN40P50P Atribi pwodwi yo

Nimewo Pati : IXTN40P50P
Manifakti : IXYS
Deskripsyon : MOSFET P-CH 500V 40A SOT227
Seri : PolarP™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 230 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 205nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 11500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 890W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC

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