DMN33D8LDW-7 Pricing (USD) [1180825PC Stock]
- 1 pcs$0.03132
- 3,000 pcs$0.02871
- Nimewo Pati:
- DMN33D8LDW-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 0.25A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN33D8LDW-7 electronic components. DMN33D8LDW-7 can be shipped within 24 hours after order. If you have any demands for DMN33D8LDW-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN33D8LDW-7 Atribi pwodwi yo
Nimewo Pati :
DMN33D8LDW-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 30V 0.25A
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
250mA
RD sou (Max) @ Id, Vgs :
2.4 Ohm @ 250mA, 10V
Vgs (th) (Max) @ Id :
1.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
1.23nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
48pF @ 5V
Pouvwa - Max :
350mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
SOT-363
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