Nexperia USA Inc. - PHD9NQ20T,118

KEY Part #: K6420754

PHD9NQ20T,118 Pricing (USD) [246005PC Stock]

  • 1 pcs$0.17909
  • 10,000 pcs$0.17820

Nimewo Pati:
PHD9NQ20T,118
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 200V 8.7A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur and Tiristors - SCR ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PHD9NQ20T,118 Atribi pwodwi yo

Nimewo Pati : PHD9NQ20T,118
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 200V 8.7A DPAK
Seri : TrenchMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 400 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 24nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 959pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 88W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63