Diodes Incorporated - DMN61D9UW-7

KEY Part #: K6416230

DMN61D9UW-7 Pricing (USD) [1489430PC Stock]

  • 1 pcs$0.02483
  • 3,000 pcs$0.02301

Nimewo Pati:
DMN61D9UW-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 60V 0.34A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN61D9UW-7 electronic components. DMN61D9UW-7 can be shipped within 24 hours after order. If you have any demands for DMN61D9UW-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN61D9UW-7 Atribi pwodwi yo

Nimewo Pati : DMN61D9UW-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 60V 0.34A
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 340mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 5V
RD sou (Max) @ Id, Vgs : 2 Ohm @ 50mA, 5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.4nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 28.5pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 320mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-323
Pake / Ka : SC-70, SOT-323