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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. CTLDM8120-M621H BK

Central Semiconductor Corp - CTLDM8120-M621H BK

KEY Part #: K6400442

[3396PC Stock]

    Nimewo Pati:
    CTLDM8120-M621H BK
    Manifakti:
    Central Semiconductor Corp
    Detaye deskripsyon:
    MOSFET P-CH 20V DFN6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - RF, Modil pouvwa chofè, Tiristors - DIACs, SIDACs and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in Central Semiconductor Corp CTLDM8120-M621H BK electronic components. CTLDM8120-M621H BK can be shipped within 24 hours after order. If you have any demands for CTLDM8120-M621H BK, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    CTLDM8120-M621H BK Atribi pwodwi yo

    Nimewo Pati : CTLDM8120-M621H BK
    Manifakti : Central Semiconductor Corp
    Deskripsyon : MOSFET P-CH 20V DFN6
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 950mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
    RD sou (Max) @ Id, Vgs : 150 mOhm @ 950mA, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 3.56nC @ 4.5V
    Vgs (Max) : 8V
    Antre kapasite (Ciss) (Max) @ Vds : 200pF @ 16V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.6W (Ta)
    Operating Tanperati : -65°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : TLM621H
    Pake / Ka : 6-XFDFN Exposed Pad
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