IXFX25N90 Pricing (USD) [5783PC Stock]
- 1 pcs$8.65783
- 30 pcs$8.61475
- Nimewo Pati:
- IXFX25N90
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 900V 25A PLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXFX25N90 electronic components. IXFX25N90 can be shipped within 24 hours after order. If you have any demands for IXFX25N90, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX25N90 Atribi pwodwi yo
Nimewo Pati :
IXFX25N90
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 900V 25A PLUS247
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
330 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
10800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
560W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS247™-3
Pake / Ka :
TO-247-3
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