IXYS - IXTK22N100L

KEY Part #: K6402781

IXTK22N100L Pricing (USD) [3295PC Stock]

  • 1 pcs$14.53208
  • 25 pcs$14.45978

Nimewo Pati:
IXTK22N100L
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1000V 22A TO-264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in IXYS IXTK22N100L electronic components. IXTK22N100L can be shipped within 24 hours after order. If you have any demands for IXTK22N100L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTK22N100L Atribi pwodwi yo

Nimewo Pati : IXTK22N100L
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1000V 22A TO-264
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 20V
RD sou (Max) @ Id, Vgs : 600 mOhm @ 11A, 20V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 270nC @ 15V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 7050pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-264 (IXTK)
Pake / Ka : TO-264-3, TO-264AA