Diodes Incorporated - ZXMHC10A07N8TC

KEY Part #: K6523319

ZXMHC10A07N8TC Pricing (USD) [153564PC Stock]

  • 1 pcs$0.24086
  • 2,500 pcs$0.21317

Nimewo Pati:
ZXMHC10A07N8TC
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N/2P-CH 100V 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Transistors - JFETs and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Diodes Incorporated ZXMHC10A07N8TC electronic components. ZXMHC10A07N8TC can be shipped within 24 hours after order. If you have any demands for ZXMHC10A07N8TC, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMHC10A07N8TC Atribi pwodwi yo

Nimewo Pati : ZXMHC10A07N8TC
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N/2P-CH 100V 8-SOIC
Seri : -
Estati Pati : Active
FET Kalite : 2 N and 2 P-Channel (H-Bridge)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 800mA, 680mA
RD sou (Max) @ Id, Vgs : 700 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 2.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 138pF @ 60V
Pouvwa - Max : 870mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOP