Nimewo Pati :
ZXMHC10A07N8TC
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N/2P-CH 100V 8-SOIC
FET Kalite :
2 N and 2 P-Channel (H-Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
800mA, 680mA
RD sou (Max) @ Id, Vgs :
700 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
138pF @ 60V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOP