IXYS - IXFK210N30X3

KEY Part #: K6398585

IXFK210N30X3 Pricing (USD) [4100PC Stock]

  • 1 pcs$10.56324

Nimewo Pati:
IXFK210N30X3
Manifakti:
IXYS
Detaye deskripsyon:
300V/210A ULTRA JUNCTION X3-CLAS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFK210N30X3 electronic components. IXFK210N30X3 can be shipped within 24 hours after order. If you have any demands for IXFK210N30X3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFK210N30X3 Atribi pwodwi yo

Nimewo Pati : IXFK210N30X3
Manifakti : IXYS
Deskripsyon : 300V/210A ULTRA JUNCTION X3-CLAS
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 210A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 5.5 mOhm @ 105A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 375nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 24.2nF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1250W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-264
Pake / Ka : TO-264-3, TO-264AA

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