IXYS - IXFV96N15P

KEY Part #: K6408842

[488PC Stock]


    Nimewo Pati:
    IXFV96N15P
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 150V 96A PLUS220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Diodes - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in IXYS IXFV96N15P electronic components. IXFV96N15P can be shipped within 24 hours after order. If you have any demands for IXFV96N15P, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXFV96N15P Atribi pwodwi yo

    Nimewo Pati : IXFV96N15P
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 150V 96A PLUS220
    Seri : PolarHT™ HiPerFET™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 150V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 96A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 24 mOhm @ 500mA, 10V
    Vgs (th) (Max) @ Id : 5V @ 4mA
    Chaje Gate (Qg) (Max) @ Vgs : 110nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 3500pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 480W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : PLUS220
    Pake / Ka : TO-220-3, Short Tab