IXYS - IXTA06N120P

KEY Part #: K6399533

IXTA06N120P Pricing (USD) [29783PC Stock]

  • 1 pcs$1.52041
  • 10 pcs$1.35736
  • 100 pcs$1.05595
  • 500 pcs$0.85506
  • 1,000 pcs$0.72114

Nimewo Pati:
IXTA06N120P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1200V 0.6A TO-263.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Modil pouvwa chofè and Diodes - RF ...
Avantaj konpetitif:
We specialize in IXYS IXTA06N120P electronic components. IXTA06N120P can be shipped within 24 hours after order. If you have any demands for IXTA06N120P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTA06N120P Atribi pwodwi yo

Nimewo Pati : IXTA06N120P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1200V 0.6A TO-263
Seri : PolarVHV™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 600mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 32 Ohm @ 300mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs : 13.3nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 270pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 42W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (IXTA)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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