IRF3709ZPBF Pricing (USD) [56337PC Stock]
- 1 pcs$0.66478
- 10 pcs$0.59036
- 100 pcs$0.46647
- 500 pcs$0.34221
- 1,000 pcs$0.27017
- Nimewo Pati:
- IRF3709ZPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 87A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Tiristors - SCR, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF3709ZPBF electronic components. IRF3709ZPBF can be shipped within 24 hours after order. If you have any demands for IRF3709ZPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF3709ZPBF Atribi pwodwi yo
Nimewo Pati :
IRF3709ZPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 87A TO-220AB
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
87A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6.3 mOhm @ 21A, 10V
Vgs (th) (Max) @ Id :
2.25V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
26nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2130pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
79W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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