R6012ANJTL Pricing (USD) [48758PC Stock]
- 1 pcs$0.88652
- 1,000 pcs$0.88211
- Nimewo Pati:
- R6012ANJTL
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 10V DRIVE LPTS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor R6012ANJTL electronic components. R6012ANJTL can be shipped within 24 hours after order. If you have any demands for R6012ANJTL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R6012ANJTL Atribi pwodwi yo
Nimewo Pati :
R6012ANJTL
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 10V DRIVE LPTS
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
420 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1300pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LPTS
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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