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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. 1HP04CH-TL-W

ON Semiconductor - 1HP04CH-TL-W

KEY Part #: K6393279

1HP04CH-TL-W Pricing (USD) [457093PC Stock]

  • 1 pcs$0.09827
  • 3,000 pcs$0.09778
Nimewo Pati:
1HP04CH-TL-W
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 100V 0.17A SOT-23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in ON Semiconductor 1HP04CH-TL-W electronic components. 1HP04CH-TL-W can be shipped within 24 hours after order. If you have any demands for 1HP04CH-TL-W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1HP04CH-TL-W Atribi pwodwi yo

Nimewo Pati : 1HP04CH-TL-W
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 100V 0.17A SOT-23
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 170mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 18 Ohm @ 80mA, 10V
Vgs (th) (Max) @ Id : 2.6V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 0.9nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 14pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 3-CPH
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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