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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDMS86520L

ON Semiconductor - FDMS86520L

KEY Part #: K6411771

FDMS86520L Pricing (USD) [134951PC Stock]

  • 1 pcs$0.27545
  • 3,000 pcs$0.27408
Nimewo Pati:
FDMS86520L
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N CH 60V 13.5A 8PQFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMS86520L electronic components. FDMS86520L can be shipped within 24 hours after order. If you have any demands for FDMS86520L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS86520L Atribi pwodwi yo

Nimewo Pati : FDMS86520L
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N CH 60V 13.5A 8PQFN
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13.5A (Ta), 22A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 8.2 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4615pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 69W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-PQFN (5x6)
Pake / Ka : 8-PowerTDFN

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