Infineon Technologies - DF23MR12W1M1B11BPSA1

KEY Part #: K6522773

DF23MR12W1M1B11BPSA1 Pricing (USD) [945PC Stock]

  • 1 pcs$49.10844

Nimewo Pati:
DF23MR12W1M1B11BPSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET MOD 1200V 25A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - Pwogramasyon Unijunction and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Infineon Technologies DF23MR12W1M1B11BPSA1 electronic components. DF23MR12W1M1B11BPSA1 can be shipped within 24 hours after order. If you have any demands for DF23MR12W1M1B11BPSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF23MR12W1M1B11BPSA1 Atribi pwodwi yo

Nimewo Pati : DF23MR12W1M1B11BPSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET MOD 1200V 25A
Seri : CoolSiC™
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tj)
RD sou (Max) @ Id, Vgs : 45 mOhm @ 25A, 15V (Typ)
Vgs (th) (Max) @ Id : 5.55V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs : 62nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds : 1840pF @ 800V
Pouvwa - Max : 20mW
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : AG-EASY1BM-2