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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NVB6411ANT4G

ON Semiconductor - NVB6411ANT4G

KEY Part #: K6402817

NVB6411ANT4G Pricing (USD) [2573PC Stock]

  • 800 pcs$0.74229
Nimewo Pati:
NVB6411ANT4G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 75A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVB6411ANT4G electronic components. NVB6411ANT4G can be shipped within 24 hours after order. If you have any demands for NVB6411ANT4G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVB6411ANT4G Atribi pwodwi yo

Nimewo Pati : NVB6411ANT4G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 75A D2PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 77A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 14 mOhm @ 72A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 217W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK-3
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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