Deskripsyon :
MOSFET 4N-CH 60V 5A 15-SIP
FET Kalite :
4 N-Channel (Half Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5A
RD sou (Max) @ Id, Vgs :
300 mOhm @ 3A, 4V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
320pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
15-SIP Exposed Tab, Formed Leads
Pake Aparèy Founisè :
15-ZIP