Diodes Incorporated - DMP6185SEQ-13

KEY Part #: K6395975

DMP6185SEQ-13 Pricing (USD) [561892PC Stock]

  • 1 pcs$0.06583

Nimewo Pati:
DMP6185SEQ-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET P-CHANNEL 60V 3A SOT223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMP6185SEQ-13 Atribi pwodwi yo

Nimewo Pati : DMP6185SEQ-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET P-CHANNEL 60V 3A SOT223
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 150 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 708pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-223
Pake / Ka : TO-261-4, TO-261AA