[12990PC Stock]
- Nimewo Pati:
- FDS5170N7
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 60V 10.6A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDS5170N7 electronic components. FDS5170N7 can be shipped within 24 hours after order. If you have any demands for FDS5170N7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDS5170N7 Atribi pwodwi yo
Nimewo Pati :
FDS5170N7
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 60V 10.6A 8-SOIC
Seri :
PowerTrench®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
12 mOhm @ 10.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
71nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2889pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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