[3091PC Stock]
- Nimewo Pati:
- IXFJ40N30Q
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CHANNEL 300V 40A TO268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - JFETs, Tiristors - TRIACs, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFJ40N30Q electronic components. IXFJ40N30Q can be shipped within 24 hours after order. If you have any demands for IXFJ40N30Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFJ40N30Q Atribi pwodwi yo
Nimewo Pati :
IXFJ40N30Q
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CHANNEL 300V 40A TO268
Seri :
HiPerFET™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
80 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
200nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-268
Pake / Ka :
TO-220-3, Short Tab
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