SI8816EDB-T2-E1 Pricing (USD) [592245PC Stock]
- 1 pcs$0.06277
- 3,000 pcs$0.06245
- Nimewo Pati:
- SI8816EDB-T2-E1
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 30V MICRO FOOT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI8816EDB-T2-E1 electronic components. SI8816EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8816EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8816EDB-T2-E1 Atribi pwodwi yo
Nimewo Pati :
SI8816EDB-T2-E1
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 30V MICRO FOOT
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 10V
RD sou (Max) @ Id, Vgs :
109 mOhm @ 1A, 10V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8nC @ 10V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
195pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-Microfoot
Pake / Ka :
4-XFBGA
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