Nimewo Pati :
SQJ202EP-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 12V 20A/60A PPAK SO
Seri :
Automotive, AEC-Q101, TrenchFET®
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A, 60A
RD sou (Max) @ Id, Vgs :
6.5 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
975pF @ 6V
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SO-8 Dual
Pake Aparèy Founisè :
PowerPAK® SO-8 Dual Asymmetric