[12666PC Stock]
- Nimewo Pati:
- IRF7663TR
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 20V 8.2A MICRO8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - RF, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7663TR electronic components. IRF7663TR can be shipped within 24 hours after order. If you have any demands for IRF7663TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7663TR Atribi pwodwi yo
Nimewo Pati :
IRF7663TR
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 20V 8.2A MICRO8
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
20 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
45nC @ 5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
2520pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.8W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Micro8™
Pake / Ka :
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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