IXYS - IXFL80N50Q2

KEY Part #: K6402908

IXFL80N50Q2 Pricing (USD) [3388PC Stock]

  • 1 pcs$14.13146
  • 25 pcs$14.06115

Nimewo Pati:
IXFL80N50Q2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 64A ISOPLUS264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo and Diodes - RF ...
Avantaj konpetitif:
We specialize in IXYS IXFL80N50Q2 electronic components. IXFL80N50Q2 can be shipped within 24 hours after order. If you have any demands for IXFL80N50Q2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFL80N50Q2 Atribi pwodwi yo

Nimewo Pati : IXFL80N50Q2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 64A ISOPLUS264
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 55A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 66 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id : 5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 260nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 10500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 625W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : ISOPLUS264™
Pake / Ka : ISOPLUS264™