DMNH6008SCTQ Pricing (USD) [43097PC Stock]
- 1 pcs$0.85711
- 50 pcs$0.68986
- 100 pcs$0.62088
- 500 pcs$0.48291
- 1,000 pcs$0.40012
- Nimewo Pati:
- DMNH6008SCTQ
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET NCH 60V 130A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMNH6008SCTQ electronic components. DMNH6008SCTQ can be shipped within 24 hours after order. If you have any demands for DMNH6008SCTQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMNH6008SCTQ Atribi pwodwi yo
Nimewo Pati :
DMNH6008SCTQ
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET NCH 60V 130A TO220AB
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
130A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
20V
Antre kapasite (Ciss) (Max) @ Vds :
2596pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
210W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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