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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. ATP112-TL-H

ON Semiconductor - ATP112-TL-H

KEY Part #: K6393227

ATP112-TL-H Pricing (USD) [234382PC Stock]

  • 1 pcs$0.15781
  • 3,000 pcs$0.13266
Nimewo Pati:
ATP112-TL-H
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 60V 25A ATPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor ATP112-TL-H electronic components. ATP112-TL-H can be shipped within 24 hours after order. If you have any demands for ATP112-TL-H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ATP112-TL-H Atribi pwodwi yo

Nimewo Pati : ATP112-TL-H
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 60V 25A ATPAK
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 43 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 33.5nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1450pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 40W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : ATPAK
Pake / Ka : ATPAK (2 leads+tab)

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