CSD13306WT Pricing (USD) [259492PC Stock]
- 1 pcs$0.14254
- 250 pcs$0.12102
- 1,250 pcs$0.07530
- Nimewo Pati:
- CSD13306WT
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 12V 6DSBGA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Transistors - JFETs, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD13306WT electronic components. CSD13306WT can be shipped within 24 hours after order. If you have any demands for CSD13306WT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD13306WT Atribi pwodwi yo
Nimewo Pati :
CSD13306WT
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 12V 6DSBGA
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
10.2 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
1.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11.2nC @ 4.5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
1370pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.9W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-DSBGA (1x1.5)
Pake / Ka :
6-UFBGA, DSBGA
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