Nimewo Pati :
IPP50R380CEXKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N CH 500V 9.9A PGTO220
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
13V
RD sou (Max) @ Id, Vgs :
380 mOhm @ 3.2A, 13V
Vgs (th) (Max) @ Id :
3.5V @ 260µA
Chaje Gate (Qg) (Max) @ Vgs :
24.8nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
584pF @ 100V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
73W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3