Nimewo Pati :
DMT10H015LCG-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET NCH 100V 9.4A 8VDFN
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.4A (Ta), 34A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
15 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
33.3nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1871pF @ 50V
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 155°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
V-DFN3333-8
Pake / Ka :
8-VDFN Exposed Pad