DMT10H015LCG-7 Pricing (USD) [199065PC Stock]
- 1 pcs$0.18581
- 2,000 pcs$0.16445
- Nimewo Pati:
- DMT10H015LCG-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET NCH 100V 9.4A 8VDFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Tiristors - SCR and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMT10H015LCG-7 electronic components. DMT10H015LCG-7 can be shipped within 24 hours after order. If you have any demands for DMT10H015LCG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT10H015LCG-7 Atribi pwodwi yo
Nimewo Pati :
DMT10H015LCG-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET NCH 100V 9.4A 8VDFN
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.4A (Ta), 34A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
15 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
33.3nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1871pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 155°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
V-DFN3333-8
Pake / Ka :
8-VDFN Exposed Pad
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