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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NTMD2P01R2G

ON Semiconductor - NTMD2P01R2G

KEY Part #: K6524616

[3772PC Stock]

    Nimewo Pati:
    NTMD2P01R2G
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET 2P-CH 16V 2.3A 8SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Tiristors - SCR and Transistors - JFETs ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTMD2P01R2G electronic components. NTMD2P01R2G can be shipped within 24 hours after order. If you have any demands for NTMD2P01R2G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTMD2P01R2G Atribi pwodwi yo

    Nimewo Pati : NTMD2P01R2G
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET 2P-CH 16V 2.3A 8SOIC
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 P-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 16V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.3A
    RD sou (Max) @ Id, Vgs : 100 mOhm @ 2.4A, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : 750pF @ 16V
    Pouvwa - Max : 710mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
    Pake Aparèy Founisè : 8-SOIC

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