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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. ALD111933PAL

Advanced Linear Devices Inc. - ALD111933PAL

KEY Part #: K6521895

ALD111933PAL Pricing (USD) [25344PC Stock]

  • 1 pcs$1.39702
  • 10 pcs$1.26128
  • 100 pcs$0.96155
  • 500 pcs$0.74786
  • 1,000 pcs$0.61965
Nimewo Pati:
ALD111933PAL
Manifakti:
Advanced Linear Devices Inc.
Detaye deskripsyon:
MOSFET 2N-CH 10.6V 8DIP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Modil pouvwa chofè, Transistors - Objektif espesyal and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Advanced Linear Devices Inc. ALD111933PAL electronic components. ALD111933PAL can be shipped within 24 hours after order. If you have any demands for ALD111933PAL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ALD111933PAL Atribi pwodwi yo

Nimewo Pati : ALD111933PAL
Manifakti : Advanced Linear Devices Inc.
Deskripsyon : MOSFET 2N-CH 10.6V 8DIP
Seri : EPAD®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Matched Pair
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 10.6V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
RD sou (Max) @ Id, Vgs : 500 Ohm @ 5.9V
Vgs (th) (Max) @ Id : 3.35V @ 1µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 2.5pF @ 5V
Pouvwa - Max : 500mW
Operating Tanperati : 0°C ~ 70°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè : 8-PDIP

Dènye nouvèl

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