Deskripsyon :
GAN TRANS ASYMMETRICAL HALF BRID
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta), 40A (Ta)
RD sou (Max) @ Id, Vgs :
8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 4mA, 2.5V @ 16mA
Chaje Gate (Qg) (Max) @ Vgs :
4.9nC @ 15V, 19nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds :
475pF @ 15V, 1960pF @ 15V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die