[3941PC Stock]
- Nimewo Pati:
- IRF7338TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N/P-CH 12V 6.3A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - IGBTs - Single and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7338TRPBF electronic components. IRF7338TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7338TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7338TRPBF Atribi pwodwi yo
Nimewo Pati :
IRF7338TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N/P-CH 12V 6.3A 8-SOIC
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.3A, 3A
RD sou (Max) @ Id, Vgs :
34 mOhm @ 6A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
640pF @ 9V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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