IRFHM8329TRPBF Pricing (USD) [315045PC Stock]
- 1 pcs$0.11740
- 4,000 pcs$0.10068
- Nimewo Pati:
- IRFHM8329TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 16A PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFHM8329TRPBF electronic components. IRFHM8329TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM8329TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8329TRPBF Atribi pwodwi yo
Nimewo Pati :
IRFHM8329TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 16A PQFN
Seri :
HEXFET®
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A (Ta), 57A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1710pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.6W (Ta), 33W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PQFN (3x3)
Pake / Ka :
8-PowerTDFN
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