Infineon Technologies - IKD10N60RAATMA2

KEY Part #: K6424928

IKD10N60RAATMA2 Pricing (USD) [99811PC Stock]

  • 1 pcs$0.39175
  • 2,500 pcs$0.38932

Nimewo Pati:
IKD10N60RAATMA2
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 20A 150W TO252-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Diodes - Zener - Arrays, Diodes - RF, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IKD10N60RAATMA2 Atribi pwodwi yo

Nimewo Pati : IKD10N60RAATMA2
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 20A 150W TO252-3
Seri : TrenchStop®
Estati Pati : Not For New Designs
Kalite IGBT : Trench
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 20A
Kouran - Pèseptè batman (Icm) : 30A
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 10A
Pouvwa - Max : 150W
Oblije chanje enèji : -
Kalite Antre : Standard
Gate chaje : 64nC
Td (on / off) @ 25 ° C : 14ns/192ns
Kondisyon egzamen an : 400V, 10A, 23 Ohm, 15V
Ranvèse Tan Reverse (trr) : 62ns
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : PG-TO252-3