TPN7R506NH,L1Q Pricing (USD) [249256PC Stock]
- 1 pcs$0.15584
- 5,000 pcs$0.15507
- Nimewo Pati:
- TPN7R506NH,L1Q
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 60V 26A 8TSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPN7R506NH,L1Q electronic components. TPN7R506NH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN7R506NH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN7R506NH,L1Q Atribi pwodwi yo
Nimewo Pati :
TPN7R506NH,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 60V 26A 8TSON
Seri :
U-MOSVIII-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
26A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6.5V, 10V
RD sou (Max) @ Id, Vgs :
7.5 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1800pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta), 42W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSON Advance (3.3x3.3)
Pake / Ka :
8-PowerVDFN
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