Nimewo Pati :
SQ2319ADS-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 40V 4.6A SOT23-3
Seri :
Automotive, AEC-Q101, TrenchFET®
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
75 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
620pF @ 20V
Disipasyon Pouvwa (Max) :
2.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3 (TO-236)
Pake / Ka :
TO-236-3, SC-59, SOT-23-3