Deskripsyon :
AEC-Q101 GAN FET 100V 13.5 MOHM
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
13.5 mOhm @ 11A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs :
4nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
407pF @ 50V
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die