E3M0120090D Pricing (USD) [12304PC Stock]
- 1 pcs$3.34932
- Nimewo Pati:
- E3M0120090D
- Manifakti:
- Cree/Wolfspeed
- Detaye deskripsyon:
- E-SERIES 900V 120 MOHM G3 SIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Cree/Wolfspeed E3M0120090D electronic components. E3M0120090D can be shipped within 24 hours after order. If you have any demands for E3M0120090D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
E3M0120090D Atribi pwodwi yo
Nimewo Pati :
E3M0120090D
Manifakti :
Cree/Wolfspeed
Deskripsyon :
E-SERIES 900V 120 MOHM G3 SIC
Seri :
Automotive, AEC-Q101, E
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
23A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
15V
RD sou (Max) @ Id, Vgs :
155 mOhm @ 15A, 15V
Vgs (th) (Max) @ Id :
3.5V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs :
17.3nC @ 15V
Vgs (Max) :
+18V, -8V
Antre kapasite (Ciss) (Max) @ Vds :
350pF @ 600V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
97W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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