Infineon Technologies - BUZ31H3046XKSA1

KEY Part #: K6401866

[2902PC Stock]


    Nimewo Pati:
    BUZ31H3046XKSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 200V 14.5A TO262-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF and Tiristors - SCR ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BUZ31H3046XKSA1 electronic components. BUZ31H3046XKSA1 can be shipped within 24 hours after order. If you have any demands for BUZ31H3046XKSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BUZ31H3046XKSA1 Atribi pwodwi yo

    Nimewo Pati : BUZ31H3046XKSA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 200V 14.5A TO262-3
    Seri : SIPMOS®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 14.5A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
    RD sou (Max) @ Id, Vgs : 200 mOhm @ 9A, 5V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1120pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 95W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : PG-TO262-3-1
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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