IXYS - IXFX73N30Q

KEY Part #: K6408638

IXFX73N30Q Pricing (USD) [6463PC Stock]

  • 1 pcs$7.04822
  • 30 pcs$7.01315

Nimewo Pati:
IXFX73N30Q
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 300V 73A PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFX73N30Q electronic components. IXFX73N30Q can be shipped within 24 hours after order. If you have any demands for IXFX73N30Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX73N30Q Atribi pwodwi yo

Nimewo Pati : IXFX73N30Q
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 300V 73A PLUS247
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 73A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 45 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 5400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS247™-3
Pake / Ka : TO-247-3