PMDT290UCE,115 Pricing (USD) [753292PC Stock]
- 1 pcs$0.04935
- 4,000 pcs$0.04910
- Nimewo Pati:
- PMDT290UCE,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N/P-CH 20V SOT666.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Tiristors - TRIACs and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMDT290UCE,115 electronic components. PMDT290UCE,115 can be shipped within 24 hours after order. If you have any demands for PMDT290UCE,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDT290UCE,115 Atribi pwodwi yo
Nimewo Pati :
PMDT290UCE,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N/P-CH 20V SOT666
Seri :
Automotive, AEC-Q101, TrenchMOS™
Estati Pati :
Active
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
800mA, 550mA
RD sou (Max) @ Id, Vgs :
380 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.68nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
83pF @ 10V
Pouvwa - Max :
500mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
SOT-666
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