STS8DN6LF6AG Pricing (USD) [150162PC Stock]
- 1 pcs$0.24632
- 2,500 pcs$0.21927
- Nimewo Pati:
- STS8DN6LF6AG
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET 2 N-CHANNEL 60V 8A 8SO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STS8DN6LF6AG electronic components. STS8DN6LF6AG can be shipped within 24 hours after order. If you have any demands for STS8DN6LF6AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STS8DN6LF6AG Atribi pwodwi yo
Nimewo Pati :
STS8DN6LF6AG
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET 2 N-CHANNEL 60V 8A 8SO
Seri :
Automotive, AEC-Q101, STripFET™ F6
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Ta)
RD sou (Max) @ Id, Vgs :
24 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
27nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1340pF @ 25V
Pouvwa - Max :
3.2W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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