Nimewo Pati :
IPB65R045C7ATMA2
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 650V 46A TO-263-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
46A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 24.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 1.25mA
Chaje Gate (Qg) (Max) @ Vgs :
93nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
4340pF @ 400V
Disipasyon Pouvwa (Max) :
227W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-3
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB