Infineon Technologies - SPA08N80C3XKSA1

KEY Part #: K6399405

SPA08N80C3XKSA1 Pricing (USD) [33884PC Stock]

  • 1 pcs$1.21633

Nimewo Pati:
SPA08N80C3XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 800V 8A TO220FP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies SPA08N80C3XKSA1 electronic components. SPA08N80C3XKSA1 can be shipped within 24 hours after order. If you have any demands for SPA08N80C3XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPA08N80C3XKSA1 Atribi pwodwi yo

Nimewo Pati : SPA08N80C3XKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 800V 8A TO220FP
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 650 mOhm @ 5.1A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 470µA
Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 40W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-FP
Pake / Ka : TO-220-3 Full Pack

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